2004 international conference on indium phosphide and related materials (16th IPRM, conference proceedings)International Conference on Indium Phosphide and Related Materials. 2004, isbn 0-7803-8595-0, 1Vol, XIV-778 p, isbn 0-7803-8595-0Conference Proceedings

Gallium nitride materials and devices II (22-25 January 2007, San Jose, California, USA)Morkoç, Hadis; Litton, Cole W.Proceedings of SPIE, the International Society for Optical Engineering. 2007, issn 0277-786X, isbn 978-0-8194-6586-3, 1Vol, various pagings, isbn 978-0-8194-6586-3Conference Proceedings

GaInAs/AlGaInAs DH and MQW lasers with 1.5-1.7 μm lasing wavelengths grown by atmospheric pressure MOVPEGESSNER, R; DRUMINSKI, M; BESCHORNER, M et al.Electronics Letters. 1989, Vol 25, Num 8, pp 516-517, issn 0013-5194, 2 p.Article

Impact ionization rates in an In Ga As/In Al As superlatticeKAGAWA, T; KAWAMURA, Y; ASAI, H et al.Applied physics letters. 1989, Vol 55, Num 10, pp 993-995, issn 0003-6951, 3 p.Article

Monte Carlo study of the influence of collector region velocity overshoot on the high-frequency performance of AlGaAs/GaAs heterojunction bipolar transistorsROCKETT, P. I.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 10, pp 1573-1579, issn 0018-9383Article

The fabrication of sub-micron width mesas in GaAs/Ga_1-xAl_xAs heterojunction materialHUTCHINGS, K. M; GRASSIE, A. D. C; LAKRIMI, M et al.Semiconductor science and technology. 1988, Vol 3, Num 10, pp 1057-1059, issn 0268-1242Article

Gallium nitride materials and devices VI (24-27 January 2011, San Francisco, California, United States)Chyi, Jen-Inn.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7939, issn 0277-786X, isbn 978-0-8194-8476-5, 1 vol, isbn 978-0-8194-8476-5Conference Proceedings

Structural and electrical investigation of high temperature Fe implanted gainp layers lattice matched to GaAsCESCA, T; GASPAROTTO, A; VEMA, A et al.International Conference on Indium Phosphide and Related Materials. 2004, pp 276-277, isbn 0-7803-8595-0, 1Vol, 2 p.Conference Paper

Mechanisms of III-V light-emitting diode bulk degradationTORCHINSKAYA, T. V.SPIE proceedings series. 1998, pp 200-202, isbn 0-8194-2756-X, 2VolConference Paper

Single-stage calculation of the total energy of compositionally modulated III-V alloysGLAS, F.Journal of applied physics. 1989, Vol 66, Num 4, pp 1667-1670, issn 0021-8979, 4 p.Article

Monte Carlo particle investigation of noise in short n⁺-n-n⁺ GaAs diodesJUNEVICIUS, D; REKLAITIS, A.Electronics Letters. 1988, Vol 24, Num 21, pp 1307-1308, issn 0013-5194Article

Computer simulation experiment on the mm-wave properties of indium phosphide double drift impattsBANERJEE, J. P; PATI, S. P; ROY, S. K et al.Physica status solidi. A. Applied research. 1988, Vol 109, Num 1, pp 359-364, issn 0031-8965Article

MOVPE of III/V semiconductors using nitrogen as the carrier gasHARDTDEGEN, H.SPIE proceedings series. 1998, pp 244-251, isbn 0-8194-2756-X, 2VolConference Paper

Microtomography observation of precipitates in semi-insulating GaAs materialsGALL, P; FILLARD, J. P; CASTAGNE, M et al.Journal of applied physics. 1988, Vol 64, Num 10, pp 5161-5169, issn 0021-8979Article

Novel index semiconductor surfacesHENINI, Mohamed.Microelectronics journal. 1995, Vol 26, Num 8, issn 0959-8324, 168 p.Conference Proceedings

Effects of energy relaxation time on performance of AlGaAs/GaAs heterojunction bipolar transistorHORIO, K.Electronics Letters. 1989, Vol 25, Num 8, pp 547-549, issn 0013-5194, 3 p.Article

In situ grown Schottky gates on GaAs/AlGaAs heterojunctionsTIMMERING, C. E; LAGEMAAT, J. M; FOXON, C. T et al.Semiconductor science and technology. 1988, Vol 3, Num 11, pp 1139-1142, issn 0268-1242Article

Clean electromigrated nanogaps imaged by transmission electron microscopySTRACHAN, Douglas R; SMITH, Deirdre E; FISCHBEIN, Michael D et al.Nano letters (Print). 2006, Vol 6, Num 3, pp 441-444, issn 1530-6984, 4 p.Article

Direct and real-time visualization of the disassembly of a single RecA-DNA-ATPγS complex using AFM imaging in fluidBING SHI LI; SATTIN, Bernie D; GOH, M. Cynthia et al.Nano letters (Print). 2006, Vol 6, Num 7, pp 1474-1478, issn 1530-6984, 5 p.Article

Quaternary InP-based layers grown in the 12X4 multiwafer planetarySCHMITT, T; DEUFEL, M; CHRISTIANSEN, K et al.International Conference on Indium Phosphide and Related Materials. 2004, pp 554-555, isbn 0-7803-8595-0, 1Vol, 2 p.Conference Paper

Carrier transport in AlGaInP laser structuresBLOOD, P; WOOD, S; SMOWTON, P. M et al.SPIE proceedings series. 1999, pp 476-484, isbn 0-8194-3095-1Conference Paper

Performance of thin separate absorption, charge, and multiplication avalanche photodiodesANSELM, K. A; NIE, H; HU, C et al.IEEE journal of quantum electronics. 1998, Vol 34, Num 3, pp 482-490, issn 0018-9197Article

Group III alkyl source purity effect on the quality of GaAs grown with tertiarybutylarsineSUNDARAM, V. S; FRAAS, L. M; SAMUEL, C. C et al.Journal of electronic materials. 1991, Vol 20, Num 7, pp 567-569, issn 0361-5235Article

Plasma etching of III-V semiconductors in CH₄/H₂/Ar electron cyclotron resonance dischargesCONSTANTINE, C; JOHNSON, D; PEARTON, S. J et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 4, pp 596-606, issn 0734-211X, 11 p.Article

Comparative study of self-limiting growth of GaAs using different Ga-alkyl compounds : (CH₃)₃Ga, C₂H₅(CH₃)₂Ga, and (C₂H₅)₃GaSAKUMA, Y; OZEKI, M; OHTSUKA, N et al.Journal of applied physics. 1990, Vol 68, Num 11, pp 5660-5664, issn 0021-8979Article